Hello everyone,
There is some trouble I am having concerning the modeling
of a PIN diode (code in the attachments), that would be nice
if someone with some more knowledge could help.
My approach has been to alter the PN
diode code included in the example and let a Newton secs1d
solver solve this (I have also tried Gummel, but I was
advised that Newton works better for PIN), but unfortunately
this hasn't produced any results yet. The PIN diode is supposed to be 180
um long with three segments of 60 um. I don't have a
specific doping strength in mind so I took the values 1e16
for both the P and N parts as a start.
Unfortunately my code still produces the following errors:
>> newtonPIN
warning: matrix singular to machine precision
warning: called from
secs1d_dd_newton at line 69 column 11
newtonPIN at line 121 column 28
error: bimu_bernoulli: invalid conversion from NaN to
logical
error: called from
bimu_bernoulli at line 45 column 11
bim1a_advection_diffusion at line 99 column 13
secs1d_dd_newton>residual_jacobian at line 129
column 7
secs1d_dd_newton at line 83 column 22
newtonPIN at line 121 column 28
I have tried using a finer mesh, I am starting from zero bias,
so I guess the only thing that might be the problem is my
initial guess but I don't know what other guess to use. Does
anyone have suggestions?
Thanks so much in advance,
Best regards,
Tijmen Kroezen
Student Applied Physics TU
Delft
Heemraadssingel 245
3023CD Rotterdam
t : +31 6 24 25 46 63
m :
taddress@hidden